Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
2. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
3. Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
5. Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
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1. Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers;Crystal Growth & Design;2016-01-12
2. Evaluation of growth methods for the heteroepitaxy of non-polar(112¯0)GAN on sapphire by MOVPE;Journal of Crystal Growth;2014-12
3. The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition;Applied Surface Science;2014-07
4. Comparative studies of polar (0001) and semipolar n-type GaN with different Si doping concentrations;Current Applied Physics;2013-07
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