Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1578530
Reference26 articles.
1. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
3. Barrier-width dependence of group-III nitrides quantum-well transition energies
4. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
5. Giant electric fields in unstrained GaN single quantum wells
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