Barrier-width dependence of group-III nitrides quantum-well transition energies
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.1496/fulltext
Reference20 articles.
1. The Blue Laser Diode
2. Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
4. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
5. Schottky barrier engineering in III–V nitrides via the piezoelectric effect
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