Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
2. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
3. Structural TEM study of nonpolara-plane gallium nitride grown on(112¯0)4H-SiC by organometallic vapor phase epitaxy
4. Development and prospects of nitride materials and devices with nonpolar surfaces
5. Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited onM-Plane Sapphire by Metalorganic Vapor Phase Epitaxy
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1. The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode;physica status solidi (b);2024-04-15
2. Analysis of phase stability, elastic, electronic, thermal, and optical properties of Sc1-xYxN via ab initio methods;Journal of Molecular Modeling;2022-12-21
3. X-ray characterisation of the basal stacking fault densities of (112̄2) GaN;CrystEngComm;2021
4. Phononic bandgap and phonon anomalies in HfN and HfN/ScN metal/semiconductor superlattices measured with inelastic x-ray scattering;Applied Physics Letters;2020-09-14
5. Effects of an in-situ SiN x interlayer on structural and optical properties for nonpolar a-plane GaN epilayers;Japanese Journal of Applied Physics;2020-01-01
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