Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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2. Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP
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1. Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate;Applied Physics Letters;2023-04-03
2. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
3. Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm;Journal of Crystal Growth;2020-04
4. Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice;physica status solidi (RRL) – Rapid Research Letters;2019-10-14
5. Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers;Journal of Applied Physics;2019-06-07
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