Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers
Author:
Affiliation:
1. The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
2. NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
Funder
Japan Science and Technology Agency
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5096410
Reference29 articles.
1. Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer
2. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
3. Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
4. Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning
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