Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning

Published:2011-06 Issue:11 Volume:109 Page:114908
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nainani Aneesh,Sun Yun,Irisawa Toshifumi,Yuan Ze,Kobayashi Masaharu,Pianetta Piero,Bennett Brian. R.,Brad Boos J.,Saraswat Krishna C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3590167

Reference10 articles.

1. Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

2. Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics

3. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

4. Mobility enhancement in strained p-InGaSb quantum wells

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al Ga1–As(100) (x ∼ 0.3) surfaces treated with aqueous sodium sulfide solution: Chemistry and electronic structure;Materials Science in Semiconductor Processing;2024-10

2. Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates;Journal of Vacuum Science & Technology B;2020-09

3. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

4. Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning;Applied Physics Letters;2019-12-02

5. Evolution of Atomistic Topology at H2O/GaSb(100) Interface under Ambient Conditions and GaSb Surface Passivation;The Journal of Physical Chemistry C;2019-08-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3