Nitridation of Si(111) for growth of 2H-AlN(0001)/β-Si3N4 /Si(111) structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
3. Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE
4. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
5. Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
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1. Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates;Optical Materials;2023-11
2. Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface;Photonics;2023-10-30
3. Bistable behavior of the nitrogen impurity in SiC nanoclusters;Nanoscale;2020
4. Microscopic mechanisms of Si(111) surface nitridation and energetics of Si3N4/Si(111) interface;Applied Surface Science;2019-07
5. A study on Ga Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy;Applied Surface Science;2019-07
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