Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
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5. Sublimation growth of AlN bulk crystals in Ta crucibles
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1. Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2023-05-23
2. Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy;Journal of Crystal Growth;2021-07
3. Development of a flux-film-coated sputtering (FFC-sputtering) method for fabricating c-axis oriented AlN film;AIP Advances;2020-11-01
4. Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method;Journal of the Korean Physical Society;2020-08
5. The fabrication of AlN by hydride vapor phase epitaxy;Journal of Semiconductors;2019-12-01
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