Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE-Reference-Cited by-同舟云学术

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Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

Published:1999-05 Issue:1-3 Volume:59 Page:84-87
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schenk H.P.D.,Kaiser U.,Kipshidze G.D.,Fissel A.,Kräußlich J.,Hobert H.,Schulze J.,Richter Wo.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. J.H. Edgar (Ed.), Properties of Group III Nitrides, INSPEC, Piscataway NJ, 1994.

2. Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire

3. AlN epitaxial growth on atomically flat initially nitrided α-Al2O3 wafer

4. Electrical Characterization of the AlN/Si(111) System

5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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4. Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices;Japanese Journal of Applied Physics;2019-05-09

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