Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
2. Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers
3. Growth of GaN epilayers on Si(111) substrates using multiple buffer layers
4. The origin of stress reduction by low-temperature AlN interlayers
5. Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150mm diameter Si (111) substrate;Journal of Crystal Growth;2014-09
2. Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process;Japanese Journal of Applied Physics;2014-01-01
3. Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si$\langle 111\rangle$ Substrate;Japanese Journal of Applied Physics;2011-10-20
4. Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si<111> Substrate;Japanese Journal of Applied Physics;2011-10-01
5. High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition;Journal of Alloys and Compounds;2011-02
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