Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si<111> Substrate-Reference-Cited by-同舟云学术

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Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si<111> Substrate

Published:2011-10-01 Issue:10R Volume:50 Page:105501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Luo Ruihong,Xiang Peng,Liu Minggang,Chen Tufu,He Zhiyuan,Fan Bingfeng,Zhao Yu,Xian Yulun,Huang Shanjin,Zheng Zhiyuan,Wu Zhisheng,Jiang Hao,Wang Gang,Liu Yang,Zhang Baijun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

2. Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

3. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

4. AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain

5. GaN-based optoelectronics on silicon substrates

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