InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy-Reference-Cited by-同舟云学术

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InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

Published:2009-02-16 Issue:5 Volume:42 Page:055107
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Reiher F,Dadgar A,Bläsing J,Wieneke M,Müller M,Franke A,Reißmann L,Christen J,Krost A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=5/a=055107/pdf

Reference13 articles.

1. GaN-Based Devices on Si

2. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

3. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

4. Atomic arrangement at the AlN/Si (111) interface

5. Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates

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1. GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors;Applied Physics Express;2019-02-14

2. Monolithic photonic integrated circuit with a GaN-based bent waveguide;Journal of Micromechanics and Microengineering;2018-03-20

3. Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector;Superlattices and Microstructures;2018-01

4. Gallium nitride (GaN) on silicon substrates for LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

5. Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates;Applied Physics Letters;2017-05-08

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