Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates-Reference-Cited by-同舟云学术

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Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates

Published:2007-02 Issue:2 Volume:299 Page:399-403
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schulze F.,Kisel O.,Dadgar A.,Krtschil A.,Bläsing J.,Kunze M.,Daumiller I.,Hempel T.,Diez A.,Clos R.,Christen J.,Krost A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. GaN-Based Devices on Si

2. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

3. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

4. GaN-based optoelectronics on silicon substrates

5. Hexagonal AlN films grown on nominal and off-axis Si(001) substrates

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1. GaN-On-Si Epitaxy;digital Encyclopedia of Applied Physics;2019-08-20

2. GaN‐Based Nanorods/Graphene Heterostructures for Optoelectronic Applications;physica status solidi (b);2019-02-05

3. Interfaces between hexagonal and cubic oxides and their structure alternatives;Nature Communications;2017-11-14

4. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer;Nano Letters;2016-05-03

5. Formation of epitaxial domains: Unified theory and survey of experimental results;physica status solidi (b);2011-01-20

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