GaN‐Based Nanorods/Graphene Heterostructures for Optoelectronic Applications-Reference-Cited by-同舟云学术

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GaN‐Based Nanorods/Graphene Heterostructures for Optoelectronic Applications

Published:2019-02-05 Issue:4 Volume:256 Page:1800454
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Sarau George¹²,Heilmann Martin²,Latzel Michael²³,Tessarek Christian¹²,Christiansen Silke¹²⁴

Affiliation:

1. Helmholtz‐Zentrum Berlin für Materialien und EnergieHahn‐Meitner Platz 114109BerlinGermany

2. Max Planck Institute for the Science of LightStaudtstr. 291058ErlangenGermany

3. Institute of Optics, Information and PhotonicsFriedrich‐Alexander‐Universität Erlangen‐Nürnberg (FAU)Staudtstr. 7/B291058ErlangenGermany

4. Physics DepartmentFreie Universität BerlinArnimallee 1414195BerlinGermany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800454

Reference76 articles.

1. Band parameters for nitrogen-containing semiconductors

2. The Blue Laser Diode

3. GaN-based modulation doped FETs and UV detectors

4. Theoretical possibilities of InxGa1−xN tandem PV structures

5. Sixteen years GaN on Si

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1. InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC;Microelectronic Engineering;2023-04

2. Hybrid Fabrication Techniques and Nanowire Heterostructures;Wide Bandgap Nanowires;2022-06-23

3. Development and Applications of ReaxFF Reactive Force Fields for Group-III Gas-Phase Precursors and Surface Reactions with Graphene in Metal–Organic Chemical Vapor Deposition Synthesis;The Journal of Physical Chemistry C;2021-05-06

4. Correlative Microscopy and Spectroscopy Workflow for Microplastics;Applied Spectroscopy;2020-08-04

5. Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy;Nanotechnology;2019-12-24

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