Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates
Author:
Affiliation:
1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983386
Reference35 articles.
1. Improving GaN-on-silicon properties for GaN device epitaxy
2. Prospects of III-nitride optoelectronics grown on Si
3. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
4. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
5. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
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