Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si$\langle 111\rangle$ Substrate-Reference-Cited by-同舟云学术

Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si$\langle 111\rangle$ Substrate

Published:2011-10-20 Issue:10 Volume:50 Page:105501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Luo Ruihong,Xiang Peng,Liu Minggang,Chen Tufu,He Zhiyuan,Fan Bingfeng,Zhao Yu,Xian Yulun,Huang Shanjin,Zheng Zhiyuan,Wu Zhisheng,Jiang Hao,Wang Gang,Liu Yang,Zhang Baijun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

2. Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

3. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

4. AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain

5. GaN-based optoelectronics on silicon substrates

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1. Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates;Journal of Applied Physics;2023-04-24

2. Longitudinal optical Raman mode A1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes;Journal of Materials Science: Materials in Electronics;2020-01-31

3. Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate;Journal of Alloys and Compounds;2016-06

4. In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system;Chinese Physics B;2015-09

5. A review of GaN-based optoelectronic devices on silicon substrate;Chinese Science Bulletin;2014-03-01