In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system-Reference-Cited by-同舟云学术

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In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

Published:2015-09 Issue:9 Volume:24 Page:096103
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Yang Yi-Bin,Liu Ming-Gang,Chen Wei-Jie,Han Xiao-Biao,Chen Jie,Lin Xiu-Qi,Lin Jia-Li,Luo Hui,Liao Qiang,Zang Wen-Jie,Chen Yin-Song,Qiu Yun-Ling,Wu Zhi-Sheng,Liu Yang,Zhang Bai-Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/24/9/096103/pdf

Reference31 articles.

1. MOVPE growth of GaN on Si(111) substrates

2. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si

3. High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets;Chinese Physics B;2023-01-01

2. Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs;Applied Sciences;2019-06-11

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