Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown overr-plane sapphire substrates
3. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
4. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates
5. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
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1. High‐Quality Nonpolar a‐Plane AlGaN Film Grown on Si‐Doped AlN Template by Metal Organic Chemical Vapor Deposition;physica status solidi (b);2024-03-11
2. Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy;Semiconductor Science and Technology;2023-05-05
3. Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates;Semiconductor Science and Technology;2022-11-11
4. Growth Optimization of Nonpolar Al 0.7 Sc 0.3 N(112¯0)/Al 2 O 3 (11¯02) Thin Films Using Reactive Magnetron Sputter Epitaxy;physica status solidi (a);2022-10-28
5. Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature;Nanotechnology;2021-04-14
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