Growth and phase stabilization of HfO2 thin films by ALD using novel precursors-Reference-Cited by-同舟云学术

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Growth and phase stabilization of HfO2 thin films by ALD using novel precursors

Published:2010-01 Issue:2 Volume:312 Page:245-249
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Niinistö Jaakko,Mäntymäki Miia,Kukli Kaupo,Costelle Leila,Puukilainen Esa,Ritala Mikko,Leskelä Markku

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. The High-k Solution

2. Structural and dielectric properties of crystalline and amorphous ZrO2

3. The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

4. Chemical Vapour Deposition: Precursors and Processes;Ritala,2009

5. MOCVD and ALD of High-k Dielectric Oxides Using Alkoxide Precursors

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