Novel halogenated cyclopentadienyl hafnium precursor for atomic layer deposition of high-performance HfO<sub>2</sub> thin film-Reference-Cited by-同舟云学术

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Novel halogenated cyclopentadienyl hafnium precursor for atomic layer deposition of high-performance HfO₂ thin film

Published:2024 Issue:39 Volume:14 Page:28791-28796
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Park Sangwook¹,Choi Yoona²,Park Sunwoo¹,Lee Hayoon¹,Lee Kiho¹^ORCID,Park Jongwook¹^ORCID,Jeon Woojin²^ORCID

Affiliation:

1. Integrated Engineering, Department of Chemical Engineering, Kyung Hee University, Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 17104, Republic of Korea

2. Department of Advanced Materials Engineering for Information and Electronics, Integrated Education Program for Frontier Science & Technology (BK21 Four), Kyung Hee University, Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 17104, Republic of Korea

Abstract

By introducing iodo, we developed a novel Hf precursor for the HfO2 ALD deposition process that improved the adsorption characteristics and, in turn, suppressed interfacial layer formation, and enhanced leakage current characteristics.

Funder

Gyeonggi-do Regional Research Center

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA05848H

Reference36 articles.

1. Emerging Applications for High K Materials in VLSI Technology

2. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

3. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

4. Structural and dielectric properties of crystalline and amorphous ZrO2

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