Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy
Author:
Funder
JSPS
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
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2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300-°C;Khan;Appl. Phys. Lett.,1995
3. III-Nitride epitaxy on atomically controlled surface of sapphire substrate with slight misorientation;Aida;Jpn. J. Appl. Phys.,2012
4. High output power InGaN ultraviolet light emitting diodes fabricated on patterned substrates using metalorganic chamical vapor deposition;Tadatomo;Jpn. J. Appl. Phys.,2001
5. Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy;Usui;Jpn. J. Appl. Phys.,1997
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1. High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector;physica status solidi (a);2020-09-03
2. Evaluation of GaAs solar cells grown under different conditions via hydride vapor phase epitaxy;Journal of Crystal Growth;2020-05
3. Improvement of Heterointerface Properties of GaAs Solar Cells Grown With InGaP Layers by Hydride Vapor-Phase Epitaxy;IEEE Journal of Photovoltaics;2019-01
4. Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy;Japanese Journal of Applied Physics;2018-07-05
5. GaN Technology for Power Electronic Applications: A Review;Journal of Electronic Materials;2016-03-10
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