Evaluation of GaAs solar cells grown under different conditions via hydride vapor phase epitaxy
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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2. Vapor phase epitaxy of InGaAsP/InP DH structure by the dual-growth-chamber method;Mizutani;Jpn. J. Appl. Phys.,1980
3. Vapor-grown InGaP/GaAs solar cells;Olsen;Appl. Phys. Lett.,1978
4. High-efficiency GaAs shallow homojunction solar cells;Bozler;Appl. Phys. Lett.,1977
5. Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies;Fan;Appl. Phys. Lett.,1978
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1. 1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures;Advanced Energy and Sustainability Research;2023-03
2. Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy;Crystals;2023-02-21
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4. InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy;Progress in Photovoltaics: Research and Applications;2021-07-22
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