InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

Published:2021-07-22 Issue:12 Volume:29 Page:1285-1293
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Shoji Yasushi¹^ORCID,Oshima Ryuji¹,Makita Kikuo¹^ORCID,Ubukata Akinori²,Sugaya Takeyoshi¹

Affiliation:

1. Global Zero Emission Research Center National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki Japan

2. Innovation Taiyo Nippon Sanso Corporation Tsukuba Ibaraki Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3454

Reference33 articles.

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5. Development of high‐efficiency and low‐cost solar cells for PV‐powered vehicles application;Yamaguchi M;Prog Photovolt Res Appl,2020

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