Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy-Reference-Cited by-同舟云学术

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Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Published:2014-11 Issue: Volume:405 Page:19-22
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nomura Kazushiro,Goto Ken,Togashi Rie,Murakami Hisashi,Kumagai Yoshinao,Kuramata Akito,Yamakoshi Shigenobu,Koukitu Akinori

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications

2. Large-size β-Ga2O3 single crystals and wafers

3. Development of gallium oxide power devices

4. Czochralski growth and characterization of β-Ga2O3 single crystals

5. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

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1. High-Efficiency Doping Outcomes in Homoepitaxial β-Ga₂O₃ Films via Pulsed Si Doping with MOCVD;Crystal Growth & Design;2024-09-13

2. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

3. Beta-Gallium Oxide Material and Device Technologies;Annual Review of Materials Research;2024-08-05

4. Electrical properties of unintentionally doped β-Ga₂O₃ (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2024-08-01

5. High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes;Journal of Vacuum Science & Technology A;2024-07-01

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