Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion
Author:
Funder
BMBF
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
2. High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition
3. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
4. Highly strained very high-power laser diodes with InGaAs QWs
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