GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm-Reference-Cited by-同舟云学术

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GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm

Published:2025-03 Issue:2: Pwr. and Effic. Scaling in Volume:31 Page:1-10
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Mauerhoff Felix¹^ORCID,Hildenstein Philipp¹^ORCID,Maaßdorf André¹,Feise David¹^ORCID,Werner Nils¹^ORCID,Glaab Johannes¹^ORCID,Blume Gunnar¹^ORCID,Paschke Katrin¹^ORCID

Affiliation:

1. Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany

Funder

Bundesministerium für Bildung und Forschung

YELLOW

Sim-QPla

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/2944/10663302/10605053.pdf?arnumber=10605053

Reference39 articles.

1. AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates

2. Short wavelength ($\lambda$ $=$ 626-nm) GaInP/AlGaInP laser diode with a multiquantum well active layer;Vaester,1990

3. 610-nm band AlGaInP single quantum well laser diode

4. Integrated $^{9}$Be$^+$ multi-qubit gate device for the ion-trap quantum computer;Hahn;Transition,2019

5. VECSEL systems for quantum information processing with trapped beryllium ions

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