Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1350596
Reference20 articles.
1. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
2. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
3. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
4. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
5. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
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