Highly strained very high-power laser diodes with InGaAs QWs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. $\bf In_{0.38}Ga_{0.62}As$/InAlGaAs/InGaP Strained Double Quantum Well Lasers on $\bf In_{0.21}Ga_{0.79}As$ Ternary Substrate
2. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers
3. Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio
4. Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050nm
5. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
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1. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm;Journal of Crystal Growth;2018-06
2. Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness;High-Power Diode Laser Technology and Applications XIII;2015-04-01
3. Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion;Journal of Crystal Growth;2015-03
4. Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells;SPIE Proceedings;2014-03-12
5. High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13°;Optics Letters;2008-09-24
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