Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1467697
Reference18 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
3. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
4. Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
5. Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
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