High-resistance GaN epilayers with low dislocation density via growth mode modification-Reference-Cited by-同舟云学术

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High-resistance GaN epilayers with low dislocation density via growth mode modification

Published:2016-09 Issue: Volume:450 Page:160-163
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xu Z.Y.,Xu F.J.,Wang J.M.,Lu L.,Yang Z.J.,Wang X.Q.,Shen B.

Funder

National Basic Research Program of China

National High-Tech Research and Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Progress towards ultra-wideband AlGaN/GaN MMICs

2. GaN based transistors for high power applications

3. Power electronics on InAlN/(In)GaN: Prospect for a record performance

4. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

5. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature;ACS Sustainable Chemistry & Engineering;2018-12-12

2. Vertical leakage induced current degradation and relevant traps with large lattice relaxation in AlGaN/GaN heterostructures on Si;Applied Physics Letters;2018-01-15

3. Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices;Advanced Materials;2017-11-02

4. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate;Journal of Physics D: Applied Physics;2017-09-07

5. Influence of TMAl preflow on AlN epitaxy on sapphire;Applied Physics Letters;2017-05-08

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