Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature-Reference-Cited by-同舟云学术

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Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature

Published:2018-12-12 Issue:1 Volume:7 Page:487-495
ISSN:2168-0485
Container-title:ACS Sustainable Chemistry & Engineering
language:en
Short-container-title:ACS Sustainable Chem. Eng.

Author:

Lee Wei-Hao¹^ORCID,Yin Yu-Tung¹,Cheng Po-Hsien¹,Shyue Jing-Jong²^ORCID,Shiojiri Makoto³,Lin Hsin-Chih¹^ORCID,Chen Miin-Jang¹

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Rd., Sec. 4, Taipei 10617, Taiwan

2. Research Center for Applied Sciences, Academia Sinica, 128, Academia Rd., Sec. 2, Taipei 11529, Taiwan

3. Kyoto Institute of Technology, Kyoto 606-8585, Japan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Renewable Energy, Sustainability and the Environment,General Chemical Engineering,Environmental Chemistry,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acssuschemeng.8b03982

Reference61 articles.

1. Stable high power GaN-ON-GaN HEMT

2. The toughest transistor yet [GaN transistors]

3. SiC and GaN Wide Bandgap Device Technology Overview

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

5. Thermal stability of GaN epitaxial layer and GaN/sapphire interface

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