Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band-Reference-Cited by-同舟云学术

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Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Published:2017-02 Issue: Volume:459 Page:173-177
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mickevičius J.,Dobrovolskas D.,Aleksiejūnas R.,Nomeika K.,Grinys T.,Kadys A.,Tamulaitis G.

Funder

Lithuanian Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

3. Indium nitride (InN): A review on growth, characterization, and properties

4. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

5. Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

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1. Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs;Journal of Luminescence;2023-05

2. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06

3. Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs;Vacuum;2021-01

4. The impact of strained layer superlattice (SLS) to the emission and internal quantum efficiency (IQE) of a GaN LED;AIP Conference Proceedings;2020

5. Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics;Journal of Alloys and Compounds;2019-06

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