Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics-Reference-Cited by-同舟云学术

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Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

Published:2019-06 Issue: Volume:790 Page:197-202
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wang Xiaowei,Liang Feng,Zhao Degang,Jiang Desheng,Liu Zongshun,Zhu Jianjun,Yang Jing^ORCID,Wang Wenjie

Funder

Science Challenge Project

National Natural Science Foundation of China

Beijing Municipal Science and Technology Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference19 articles.

1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

2. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN

3. Theoretical study of composition fluctuation in InGaN films on various substrates

4. Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

5. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of low-temperature cap layer thickness on the structure and luminescence of InGaN/GaN multiple quantum wells;Micro and Nanostructures;2024-10

2. Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects;Advanced Functional Materials;2024-01-21

3. Investigation of the Indium migration mechanism in the growth of InGaN quantum wells by MOCVD;Journal of Crystal Growth;2023-12

4. Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells;Crystals;2022-06-14

5. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06

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