Theoretical study of composition fluctuation in InGaN films on various substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/152/i=1/a=012025/pdf
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1. Band parameters for nitrogen-containing semiconductors
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
5. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
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