Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1−Bi /GaAs superlattice-Reference-Cited by-同舟云学术

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Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1−Bi /GaAs superlattice

Published:2016-07 Issue: Volume:446 Page:27-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Weixin,Ronsheim Paul A.,Wood Adam W.,Forghani Kamran,Guan Yingxin,Kuech Thomas F.,Babcock Susan E.

Funder

Materials Research Science and Engineering Center, Harvard University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Valence band anticrossing in GaBixAs1−x;Alberi;Appl. Phys. Lett.,2007

2. GaBiAs: a material for optoelectronic terahertz devices;Bertulis;Appl. Phys. Lett.,2006

3. Giant spin-orbit bowing in GaAs1−xBix;Fluegel;Phys. Rev. Lett.,2006

4. Band gap of GaAs1−xBix, 0;Francoeur;Appl. Phys. Lett.,2003

5. Bandgap and optical absorption edge of GaAs1−xBix alloys with 0;Masnadi-Shirazi;J. Appl. Phys.,2014

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1. Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys;Applied Physics Letters;2024-04-08

2. Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces;Journal of Applied Physics;2024-03-27

3. Applications of Bismuth-Containing III-V Semiconductors in Devices;Molecular Beam Epitaxy;2019-02-08

4. HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure;physica status solidi (b);2019-01-11

5. Criteria and considerations for preparing atom-probe tomography specimens of nanomaterials utilizing an encapsulation methodology;Ultramicroscopy;2018-01

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