Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%-Reference-Cited by-同舟云学术

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Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%

Published:2014-12-14 Issue:22 Volume:116 Page:223506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Masnadi-Shirazi M.¹²^ORCID,Lewis R. B.²³,Bahrami-Yekta V.²,Tiedje T.²,Chicoine M.⁴,Servati P.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada

2. Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 2Y2, Canada

3. Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z1, Canada

4. Département de Physique, Université de Montréal, Montréal, Quebec H3C 3J7, Canada

Funder

Natural Sciences and Engineering Research Council of Canada (Conseil de Recherches en Sciences Naturelles et en Génie du Canada)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904081

Reference38 articles.

1. Composition dependence of photoluminescence of GaAs1−xBix alloys

2. Band gap of GaAs1−xBix, 0

3. Bandgap and lattice constant of GaInAsP as a function of alloy composition

4. Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach

5. The anomalous bandgap bowing in GaAsN

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