Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects-Reference-Cited by-同舟云学术

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Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

Published:2017-06 Issue: Volume:468 Page:610-613
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hayama Yusuke,Takahashi Isao,Usami Noritaka

Funder

New Energy and Industrial Technology Development Organization (NEDO)

JSPS KAKENHI

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. W. van Sark, L. Korte, F. Roca (Eds.), Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, Springer, Verlag Berlin Heideberg, 2012, pp. 1.

2. Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells

3. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots;Journal of Crystal Growth;2023-11

2. Interweaved Shadows in Cast Quasi-Single Crystal Silicon Ingots;2023

3. Dual-functional carbon-doped polysilicon films for passivating contact solar cells: regulating physical contacts while promoting photoelectrical properties;Energy & Environmental Science;2021

4. Defect engineering in cast mono‐like silicon: A review;Progress in Photovoltaics: Research and Applications;2020-11-24

5. Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots;Applied Physics Express;2020-10-01

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