Abstract
Abstract
Three-dimensional distribution of grain boundaries (GBs) and generation sources of dislocation clusters is examined in a cast-grown high-performance multicrystalline silicon ingot for commercial solar cells. A significant number of dislocations are generated nearby some triple junctions of random angle GBs, although it is believed that such non-coherent GBs would not induce large strain during the cast growth. This explosive generation of dislocations would take place when the triple junctions are interacted with multiple Σ3{111} GBs. A segment of the random angle GB connected with a pair of Σ3{111} GBs nearby the triple junction would act as a dislocation source.
Funder
Core Research for Evolutional Science and Technology
GIMRT Program in IMR, Tohoku University
Subject
General Physics and Astronomy,General Engineering
Cited by
8 articles.
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