Defect engineering in cast mono‐like silicon: A review-Reference-Cited by-同舟云学术

Defect engineering in cast mono‐like silicon: A review

Published:2020-11-24 Issue:3 Volume:29 Page:294-314
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Song Lihui¹^ORCID,Yu Xuegong²^ORCID

Affiliation:

1. College of Materials and Environmental Engineering Hangzhou Dianzi University No. 1, 2nd Street, Jianggan District Hangzhou 310018 People's Republic of China

2. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering Zhejiang University No. 38 Zheda Road Hangzhou 310027 People's Republic of China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3364

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4. Mono‐like silicon growth using functional grain boundaries to limit area of multicrystalline grains;Kutsukake K;IEEE J Photovolt,2013

5. Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

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