Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells-Reference-Cited by-同舟云学术

Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells

Published:2011-12-30 Issue:6 Volume:20 Page:735-746
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Jouini Anis¹,Ponthenier Damien¹,Lignier Hélène¹,Enjalbert Nicolas¹,Marie Benoit¹,Drevet Béatrice¹,Pihan Etienne¹,Cayron Cyril²,Lafford Tamzin³,Camel Denis¹

Affiliation:

1. CEA/LITEN, INES; Savoie-Technolac; 50 avenue du Lac Léman, BP 332 73377 Le Bourget-du-Lac France

2. CEA/LITEN; 17 rue des Martyrs 38054 Grenoble Cedex 9 France

3. ESRF; 6 rue Jules Horowitz, BP220 38043 Grenoble Cedex 9 France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.1221/fullpdf

Reference17 articles.

1. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting;Fujiwara;Acta Materialia,2006

2. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed;Takahashi;Journal of Crystal Growth,2010

3. Khattak CP Parthasarathy SR Ravi BG Systems and methods for growing monocrystalline silicon ingots by directional solidification Patent No. WO 2010/005705 A1

4. Casting single crystal silicon: novel defect profiles from BP Solar's Mono2 wafers;Stoddard;Solid State Phenomena,2008

5. Ainsworth Hukin D Garrard BJ Crystallising molten materials UK Patent Application GB 2 279 585 A 1993

Cited by 71 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HIT Solar Cell Modeling Using Graphene as a Transparent Conductive Layer Considering the Atacama Desert Solar Spectrum;Applied Sciences;2023-08-17

2. Influence of helium gas flow under the retort bottom to control the impurities in grown mc-Si ingot by DS process for photovoltaic application: Numerical simulation;Journal of Crystal Growth;2023-05

3. Attempt to correlate dislocations network and distribution to macroscale plane rotations in <001> cast-mono ingots;Solar Energy Materials and Solar Cells;2023-01

4. Investigation of DS Furnace Heat Exchange Block Thickness for the Improvement mc-Si Ingot Quality;Silicon;2022-10-18

5. Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X‐Ray Bragg Diffraction Imaging;physica status solidi (b);2022-03-11