Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X‐Ray Bragg Diffraction Imaging-Reference-Cited by-同舟云学术

Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X‐Ray Bragg Diffraction Imaging

Published:2022-03-11 Issue:6 Volume:259 Page:2100594
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Neves Dias Serge William¹,Becker Maike¹,Ouaddah Hadjer¹,Périchaud Isabelle¹,Reinhart Guillaume¹,Mangelinck-Noël Nathalie¹,Regula Gabrielle¹^ORCID

Affiliation:

1. IM2NP‐Institut Matériaux Microélectronique Nanosciences de Provence UMR CNRS 7334, Univ. de Toulon Aix‐Marseille Université Campus de Saint Jérôme 13397 Marseille Cedex 20 France

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100594

Reference37 articles.

1. Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon

2. Cellular dislocations patterns in monolike silicon: Influence of stress, time under stress and impurity doping

3. Influence of contamination on the electrical activity of crystal defects in silicon

4. LBIC analysis of the electrical activity of dislocations in CZ silicon

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