Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed-Reference-Cited by-同舟云学术

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Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Published:2010-03 Issue:7 Volume:312 Page:897-901
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Takahashi Isao,Usami Noritaka,Kutsukake Kentaro,Stokkan Gaute,Morishita Kohei,Nakajima Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

2. Formation mechanism of parallel twins related to Si-facetted dendrite growth

3. Growth Mechanism of Si-Faceted Dendrites

4. In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

5. K. Nakajima, N. Usami, K. Fujiwara, K. Kutsukake, Proceedings of the 24th European Photovoltaic solar Energy Conference, 2009, p. 1020.

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