Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer-Reference-Cited by-同舟云学术

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Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

Published:2017-02 Issue: Volume:459 Page:159-162
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang Jun,Niu Mu Tong,Zhang Ji Cai,Wang Wei,wang Jian Feng,Xu Ke

Funder

National Key Technologies R&D Program of China

National Natural Science Foundation of China

National High Technology Research and Development Program of China

Guangdong Research Center for Interfacial Engineering of Functional Materials

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy;Nagashima;J. Cryst. Growth,2007

2. Large area GaN and AlN template substrates fabricated by HVPE;Soukhoveev;Phys. Status Solidi C,2009

3. Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy;Freitas;J. Cryst. Growth,2012

4. Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE

5. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy;Balaji;J. Alloy. Compd.,2012

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire;Semiconductor Science and Technology;2024-06-17

2. Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy;physica status solidi (b);2023-02-09

3. Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy;Chinese Physics B;2023-02-01

4. Molecular Dynamics Simulations of the Thermally and Stress-Activated Glide of a ⟨0001⟩{11̅00} Screw Dislocation in AlN;Crystal Growth & Design;2021-08-23

5. Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE*;Chinese Physics B;2021-03-01

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