Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. 280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
2. Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers
3. Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy
4. Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)
5. AlN substrates: fabrication via vapor phase growth and characterization
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1. Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy;Chinese Physics B;2023-02-01
2. Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates;Materials;2022-09-06
3. Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy;Journal of Crystal Growth;2021-07
4. Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD;Nanomaterials;2021-03-10
5. Effect of flux rate on AlN epilayers grown by hydride vapor phase epitaxy;Journal of Crystal Growth;2021-02
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