Molecular Dynamics Simulations of the Thermally and Stress-Activated Glide of a ⟨0001⟩{11̅00} Screw Dislocation in AlN-Reference-Cited by-同舟云学术

Molecular Dynamics Simulations of the Thermally and Stress-Activated Glide of a ⟨0001⟩{11̅00} Screw Dislocation in AlN

Published:2021-08-23 Issue:10 Volume:21 Page:5614-5620
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zhao Yinting¹^ORCID,Wang Qikun²,Li Zhe¹,Fu Danyang¹,Zhang Gang¹,Wu Jason²,Ren Zhongming¹

Affiliation:

1. State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

2. Ultratrend Technologies Inc., Room 518, Building 3, No. 503, Shunfeng Road, Yuhang District, Hangzhou City, Zhejiang Province 311199, China

Funder

National Natural Science Foundation of China

Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00428

Reference41 articles.

1. Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process

2. On the origin of the 265 nm absorption band in AlN bulk crystals

3. Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals

4. Ultraviolet optical properties analysis of wurtzite AlN films grown by vapor phase epitaxy

5. Atomic-resolution structure imaging of defects and interfaces in compound semiconductors

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