Surface supersaturation in flow-rate modulation epitaxy of GaN
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. N-polar GaN∕AlGaN∕GaN high electron mobility transistors
2. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition
3. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
4. Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy
5. N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
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1. Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy;Crystal Growth & Design;2023-12-04
2. Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer;Materials Today Communications;2021-12
3. Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC;Semiconductor Science and Technology;2020-07-31
4. Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition;Semiconductor Science and Technology;2020-07-24
5. N-face $(000\bar{1})$ GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy;Applied Physics Express;2018-07-02
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