Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition
Author:
Funder
Office of Naval Research
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab9727/pdf
Reference41 articles.
1. Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
2. N-polarity GaN on sapphire substrate grown by MOVPE
3. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
4. New Phenomenon in Narrow Germaniump−nJunctions
5. Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge
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