Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy
Author:
Affiliation:
1. Department of Electronics and Mechanical Engineering, Chiba University, Chiba, Japan
2. CREST, JST, 4‐1‐8 Hon‐cho, Kawaguchi‐chi, Saitama 332, Japan
3. Center for Frontier Electronics and Photonics, Chiba University VBL, Chiba, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303456
Reference9 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. Optical bandgap energy of wurtzite InN
4. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
5. Improvement on epitaxial grown of InN by migration enhanced epitaxy
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface supersaturation in flow-rate modulation epitaxy of GaN;Journal of Crystal Growth;2017-06
2. Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2017-05
3. N-face GaN$(000\bar{1})$ films with hillock-free smooth surfaces grown by group-III-source flow-rate modulation epitaxy;Japanese Journal of Applied Physics;2016-02-24
4. Polarity replication across m-plane GaN/ZnO interfaces;Applied Physics Letters;2011-10-31
5. Polarity Dependence of Structural and Electronic Properties of Al$_{2}$O$_{3}$/InN Interfaces;Applied Physics Express;2011-09-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3