Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

Published:2017-05 Issue: Volume:465 Page:55-59
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hestroffer Karine,Lund Cory,Koksaldi Onur,Li Haoran,Schmidt Gordon,Trippel Max,Veit Peter,Bertram Frank,Lu Ning,Wang Qingxiao,Christen Jürgen,Kim Moon J.,Mishra Umesh K.,Keller Stacia

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

2. Dislocations and strain relief in compositionally graded layers

3. Dislocation morphology in graded heterojunctions: GaAs1?xPx

4. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

5. Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates

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